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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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TSM4NC50CP Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4NC50CP Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM4NC50CP Taiwan Semiconductor 1 Version: A1609 N-Channel Power MOSFET 500V, 4A, 2.7 Ω FEATURES ● 100% UIS and Rg tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 500 V RDS(on) (max) 2.7 Ω Qg 12 nC APPLICATIONS ● AC/DC LED Lighting ● Power Supply ● Charger TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID 4 A TC = 100°C 2.5 Pulsed Drain Current (Note 2) IDM 16 A Total Power Dissipation @ TC = 25°C PDTOT 83 W Single Pulse Avalanche Energy (Note 3) EAS 78.4 mJ Single Pulse Avalanche Current (Note 3) IAS 2.8 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 1.5 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. |
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Ähnliche Beschreibung - TSM4NC50CP |
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