Datenblatt-Suchmaschine für elektronische Bauteile |
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TSM10NB60 Datenblatt(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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TSM10NB60 Datenblatt(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
4 / 7 page TSM10NB60 Taiwan Semiconductor Document Number: DS_P0000276 4 Version: A15 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Qg, Gate Charge (nC) ID, Continuous Drain Current (A) TJ, Junction Temperature (°C) Continuous Drain Current (A) VSD, Body Diode Forward Voltage (V) |
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