Datenblatt-Suchmaschine für elektronische Bauteile |
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TSM120N06LCS Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM120N06LCS Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TSM120N06LCS Taiwan Semiconductor 1 Version: B1606 N-Channel Power MOSFET 60V, 23A, 12m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and R g tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Motor Control for BLDC ● Battery Power Management KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 60 V RDS(on) (max) VGS = 10V 12 m Ω VGS = 4.5V 15 Qg 19 nC SOP-8 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25°C ID 23 A TA = 25°C 10 Pulsed Drain Current (Note 1) IDM 92 A Single Pulse Avalanche Current (Note 2) IAS 19 A Single Pulse Avalanche Energy (Note 2) EAS 54 mJ Total Power Dissipation TC = 25°C PD 12.5 W TC = 125°C 2.5 Total Power Dissipation TA = 25°C PD 2.2 W TA = 125°C 0.4 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 10 °C/W Junction to Ambient Thermal Resistance RӨJA 57 °C/W Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. |
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