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74AHCT3G14DP Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer 74AHCT3G14DP
Bauteilbeschribung  Inverting Schmitt trigger
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT3G14DP Datenblatt(HTML) 2 Page - NXP Semiconductors

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2004 Oct 18
2
Philips Semiconductors
Product specification
Inverting Schmitt trigger
74AHC3G14; 74AHCT3G14
FEATURES
• Symmetrical output impedance
• High noise immunity
• ESD protection:
– HBM EIA/JESD22-A114-B exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 500 V.
• Low power dissipation
• Balanced propagation delays
• Multiple package options
• Specified from −40 °C to +85 °C and −40 °C to +125 °C.
APPLICATIONS
• Wave and pulse shapers
• Astable multivibrators
• Monostable multivibrators.
DESCRIPTION
The 74AHC3G/AHCT3G14 is a high-speed Si-gate CMOS
device.
The 74AHC3G/AHCT3G14 provides three inverting
buffers with Schmitt-trigger action. These devices are
capable of transforming slowly changing input signals into
sharply defined, jitter-free output signals.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC3G14
AHCT3G14
tPHL/tPLH
propagation delay A to Y
CL = 15 pF; VCC = 5 V
3.2
4.1
ns
CI
input capacitance
1.5
1.5
pF
CPD
power dissipation capacitance
CL = 15 pF; f = 1 MHz;
notes 1 and 2
10
12
pF
INPUT
OUTPUT
nA
nY
LH
HL


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