Datenblatt-Suchmaschine für elektronische Bauteile |
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ST2317DFX Datenblatt(PDF) 2 Page - STMicroelectronics |
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ST2317DFX Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.8 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1700 V VCE = 1700 V Tj = 125 oC 0.5 1 mA mA IEBO Emitter Cut-off Current (IC = 0) VEB = 4 V 85 205 mA V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 800 mA 7 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 6 A IB = 1.2 A 5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 6 A IB = 1.2 A 0.9 1.2 V hFE ∗ DC Current Gain IC = 1 A VCE = 5 V IC = 6 A VCE = 1.5 V IC = 6 A VCE = 5 V 6 20 6 10 CCOB Collector-Output Capacitance IE = 0 VCB = 10 V f = 1 MHz 180 pF ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 6 A f = 16 KHz VCC = 135 V L = 480 µH V(flyback) = 1050 V Csn = 25 nF LBB(off) = 2.3 µH VBB(off) = -2.7 V δ = 60% 2.5 0.3 3 4.5 0.7 µs µs fT Transition Frequency VCE = 10 V IC = 0.1 A f = 1 MHz 2 MHz Vf Diode Forward Voltage IF = 8 A 1.6 2.0 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ST2317DFX 2/5 |
Ähnliche Teilenummer - ST2317DFX |
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Ähnliche Beschreibung - ST2317DFX |
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