Datenblatt-Suchmaschine für elektronische Bauteile |
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STP12PF06 Datenblatt(PDF) 2 Page - STMicroelectronics |
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STP12PF06 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 10 page STP12PF06 STF12PF06 2/10 Table 4: THERMAL DATA ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) Table 5: OFF Table 6: ON (*) Table 7: DYNAMIC TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 2.5 5.35 °C/W Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max 62.5 300 °C/W °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 23.4 4 V RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 10 A 0.18 0.20 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (2) Forward Transconductance VDS = 15 V ID = 6 A 2.5 6 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz VGS = 0 850 230 75 pF pF pF |
Ähnliche Teilenummer - STP12PF06 |
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Ähnliche Beschreibung - STP12PF06 |
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