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74AHCT2G32DP Datenblatt(PDF) 10 Page - NXP Semiconductors

Teilenummer 74AHCT2G32DP
Bauteilbeschribung  Dual 2-input OR gate
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT2G32DP Datenblatt(HTML) 10 Page - NXP Semiconductors

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9397 750 12532
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 23 February 2004
10 of 16
Philips Semiconductors
74AHC2G32; 74AHCT2G32
Dual 2-input OR gate
[1]
Typical values are measured at VCC = 5.0 V.
[2]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
[3]
The condition is VI = GND to VCC.
13. Waveforms
Table 11:
Dynamic characteristics type 74AHCT2G32
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); tr = tf ≤ 3.0 ns; see Figure 6.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
tPHL, tPLH
propagation delay
nA and nB to nY
see Figure 5
VCC = 4.5 V to 5.5 V; CL =15pF
[1] -
3.3
6.9
ns
VCC = 4.5 V to 5.5 V; CL =50pF
[1] -
4.8
7.9
ns
CPD
power dissipation
capacitance
CL = 50 pF; fi = 1 MHz
[2] [3] -17
-
pF
Tamb = −40 °C to +85 °C
tPHL, tPLH
propagation delay
nA and nB to nY
see Figure 5
VCC = 4.5 V to 5.5 V; CL = 15 pF
1.0
-
8.0
ns
VCC = 4.5 V to 5.5 V; CL = 50 pF
1.0
-
9.0
ns
Tamb = −40 °C to +125 °C
tPHL, tPLH
propagation delay
nA and nB to nY
see Figure 5
VCC = 4.5 V to 5.5 V; CL = 15 pF
1.0
-
9.0
ns
VCC = 4.5 V to 5.5 V; CL = 50 pF
1.0
-
10.0
ns
74AHC2G32: VM = 0.5 x VCC; VI = GND to VCC.
74AHCT2G32: input VM = 1.5 V and output VM = 0.5 x VCC; VI = GND to 3.0 V.
Fig 5.
The input (nA and nB) to output (nY) propagation delays.
mna224
nA, nB input
nY output
tPLH
tPHL
GND
VI
VM
VM
VOH
VOL


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