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FQPF6N80C Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer FQPF6N80C
Bauteilbeschribung  800V N-Channel MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2003 Fairchild Semiconductor Corporation
Rev. A, June 2003
QFETTM
FQP6N80C/FQPF6N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FQP6N80C
FQPF6N80C
Units
VDSS
Drain-Source Voltage
800
V
ID
Drain Current
- Continuous (TC = 25°C)
5.5
5.5 *
A
- Continuous (TC = 100°C)
3.2
3.2 *
A
IDM
Drain Current
- Pulsed
(Note 1)
22
22 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
680
mJ
IAR
Avalanche Current
(Note 1)
5.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
15.8
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25°C)
158
51
W
- Derate above 25°C
1.27
0.41
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP6N80C
FQPF6N80C
Units
RθJC
Thermal Resistance, Junction-to-Case
0.79
2.45
°C/W
RθCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
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