Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA0914 Datenblatt(PDF) 1 Page - Panasonic Semiconductor |
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2SA0914 Datenblatt(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Power Transistors 1 Publication date: December 2003 SJD00005CED ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = −100 µA, I B = 0 −150 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5V Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 −1 µA Forward current transfer ratio * hFE VCE = −5 V, I C = −10 mA 130 330 Collector-emitter saturation voltage VCE(sat) IC = −30 mA, IB = −3 mA −1V Transition frequency fT VCB = −10 V, IE = 10 mA, f = 200 MHz 70 MHz Collector output capacitance Cob VCB = −6 V, IE = 0, f = 1 MHz 5 pF (Common base, input open circuited) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open) VCEO −150 V Emitter-base voltage (Collector open) VEBO −5V Collector current IC −50 mA Peak collector current ICP −100 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Note) The part number in the parenthesis shows conventional part number. Rank R S hFE 130 to 220 185 to 330 8.0 +0.5 –0.1 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1 2SA0914 (2SA914) Silicon PNP epitaxial planar type For audio system/pli drive Complementary to 2SC1953 ■ Features • A complementary pair with 2SC1953, is optimum for the pre- driver stage of a 60 W to 100 W output amplifier • TO-126B package which requires no insulation plate for instal- lation to the heat sink ■ Absolute Maximum Ratings T C = 25°C |
Ähnliche Teilenummer - 2SA0914 |
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Ähnliche Beschreibung - 2SA0914 |
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