Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLIZ44N Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRLIZ44N Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor IRLIZ44N · FEATURES · With TO-220F package · Low input capacitance and gate charge · Low gate input resistance · Reduced switching and conduction losses · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGSS Gate-Source Voltage ± 16 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 30 22 A IDM Drain Current-Single Pulsed 160 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.3 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 65 ℃ /W |
Ähnliche Teilenummer - IRLIZ44N |
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Ähnliche Beschreibung - IRLIZ44N |
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