Datenblatt-Suchmaschine für elektronische Bauteile |
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IXFH20N85X Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IXFH20N85X Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IXFH20N85X ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 850 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=2.5mA 3.5 5.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10A 330 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V;@Tc=25℃ Tc=125℃ 25 1500 μ A VSDF Diode forward voltage ISD=20A, VGS = 0 V 1.4 V |
Ähnliche Teilenummer - IXFH20N85X |
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Ähnliche Beschreibung - IXFH20N85X |
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