Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF135S203 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF135S203 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF135S203 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 135 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=77A 6.7 8.4 mΩ IGSS Gate-Source Leakage Current VGS=±20V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=135V; VGS= 0V;Tc=25℃ VDS=108V; VGS= 0V; Tc=125℃ 20 250 μ A VSDF Diode forward voltage ISD=77A, VGS = 0 V 1.3 V |
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Ähnliche Beschreibung - IRF135S203 |
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