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QM2538N3 Datenblatt(PDF) 1 Page - uPI Group Inc.

Teilenummer QM2538N3
Bauteilbeschribung  N-Channel 20V Fast Switching MOSFET
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Hersteller  UPI [uPI Group Inc.]
Direct Link  http://www.ubiq-semi.com/
Logo UPI - uPI Group Inc.

QM2538N3 Datenblatt(HTML) 1 Page - uPI Group Inc.

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1
QM2538N3
N-Channel 20V Fast Switching MOSFET
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Sou
rce Voltage
±8
V
ID@TC=25℃
Continuous Drain Current, VGS @ 4.5V
1
56
A
ID@TC=100℃
Continuous Drain Current, VGS @ 4.5V
1
35
A
ID@TA=25℃
Continuous Drain Current, VGS @ 4.5V
1
13
A
ID@TA=70℃
Continuous Drain Current, VGS @ 4.5V
1
10
A
IDM
Pulsed Drain Current
2
100
A
EAS
Single Pulse Avalanche Energy
3
45
mJ
IAS
Avalanche Current
30
A
PD@TC=25℃
Total Power Dissipation
4
31
W
PD@TA=25℃
Total Power Dissipation
4
1.6
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction-Ambient
1
---
75
℃/W
RθJC
Thermal Resistance Junction-Case
1
---
4
℃/W
BVDSS
RDSON
(VGS=4.5V)
ID
(TC=25℃)
20V
6.0mΩ
56A
The QM2538N3 is the highest performance trench
N-Channel
MOSFET with
extreme
high cell
density , which provide excellent RDSON and gate
charge for most of the Battery MOSFET Switch.
The QM2538N3 meet the RoHS and Green
Product requirement.
Advanced high cell density Trench technology
Super Low Gate Charge
Green Device Available
Embedded ESD Protection
HBM 2KV / MM200V Verified
General Description
Features
Applications
Battery MOSFET Switch
Absolute Maximum Ratings
Thermal Data
DFN 3X3 Pin Configuration
Product Summary
Rev A.03 D031116


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