QM2604V datasheet(5/7 Pages) UPI

Teilenummer	QM2604V

Bauteilbeschribung	N-Ch and P-Ch 20V Fast Switching MOSFETs

Download	7 Pages

Scroll/Zoom	100%

Hersteller	UPI [uPI Group Inc.]

Direct Link	http://www.ubiq-semi.com/

Logo

5 / 7 page

5

QM2604V

N-Ch and P-Ch 20V Fast Switching MOSFETs

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-20

---

V

△BVDSS/△TJ BVDSS Temperature Coefficient

Reference to 25℃ , ID=-1mA

---

-0.016

---

V/℃

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=-4.5V , ID=-3A

---

125

155

mΩ

VGS=-2.5V , ID=-2A

---

180

220

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.5

-0.8

-1.2

V

△VGS(th)

VGS(th) Temperature Coefficient

---

3.97

---

mV/℃

IDSS

Drain-Source Leakage Current

VDS=-16V , VGS=0V , TJ=25℃

---

1

uA

VDS=-16V , VGS=0V , TJ=55℃

---

5

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-2A

---

5.6

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

25

50

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-2A

---

4.7

6.6

nC

Qgs

Gate-Source Charge

---

0.8

1.1

Qgd

Gate-Drain Charge

---

1.3

1.8

Td(on)

Turn-On Delay Time

VDD=-10V , VGS=-4.5V , RG=3.3Ω

ID=-2A

1.6

3.2

6.4

ns

Tr

Rise Time

17.1

34

61

Td(off)

Turn-Off Delay Time

9

18

36

Tf

Fall Time

4.6

9.2

18.4

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

320

448

pF

Coss

Output Capacitance

---

51

71

Crss

Reverse Transfer Capacitance

---

41

57

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current

1,4

VG=VD=0V , Force Current

---

-2.3

A

ISM

Pulsed Source Current

2,4

---

-9.2

A

VSD

Diode Forward Voltage

2

VGS=0V , IS=-1A , TJ=25℃

---

-1.2

V

trr

Reverse Recovery Time

IF=-2A , dI/dt=100A/µs , TJ=25℃

---

10.2

---

nS

Qrr

Reverse Recovery Charge

---

2.5

---

nC

Note :

1.The data tested by surface mounted on a 1 inch

2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3.The power dissipation is limited by 150℃ junction temperature

4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics

Ähnliche Beschreibung - QM2604V

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
FETek Technology Corp.	FKQ2901	634Kb / 7P	N-Ch and P-Ch 20V Fast Switching MOSFETs Ver : A
Unitpower Technology Li...	UM4302	1,017Kb / 7P	N-Ch and P-Ch Fast Switching MOSFETs
Unitpower Technology Li...	UD4301	1Mb / 7P	N-Ch and P-Ch Fast Switching MOSFETs
FETek Technology Corp.	FKBB0903	700Kb / 7P	N-Ch and P-Ch Fast Switching MOSFETs Ver : A
	FKBA4903	450Kb / 7P	N-Ch and P-Ch Fast Switching MOSFETs Ver : A
	FKD3903	594Kb / 7P	N-Ch and P-Ch Fast Switching MOSFETs Ver : A
	FKS3903	607Kb / 7P	N-Ch and P-Ch Fast Switching MOSFETs Ver : A
Unitpower Technology Li...	UM3301	1Mb / 7P	N-Ch and P-Ch Fast Switching MOSFETs
	UM3302	1Mb / 7P	N-Ch and P-Ch Fast Switching MOSFETs
	UM3801	1Mb / 7P	N-Ch and P-Ch Fast Switching MOSFETs

More results

QM2604V Datenblatt(PDF) 5 Page - uPI Group Inc.

QM2604V Datenblatt(HTML) 5 Page - uPI Group Inc.

Ähnliche Teilenummer - QM2604V

Ähnliche Beschreibung - QM2604V

Html Pages

1 2 3 4 5 6 7

Datenblatt Download

Link URL