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SPI11N60C3 Datenblatt(PDF) 3 Page - Infineon Technologies AG

Teilenummer SPI11N60C3
Bauteilbeschribung  Cool MOS Power Transistor
Download  14 Pages
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Hersteller  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI11N60C3 Datenblatt(HTML) 3 Page - Infineon Technologies AG

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2001-07-05
Page 3
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Transconductance
gfs
VDS≥2*ID*RDS(on)max ,
ID=7A
-
8.3
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
1460
-
pF
Output capacitance
Coss
-
610
-
Reverse transfer capacitance
Crss
-
21
-
Effective output capacitance, 1)
energy related
Co(er)
VGS=0V,
VDS=0V to 480V
-
45
-
pF
Effective output capacitance, 2)
time related
Co(tr)
-
85
-
Turn-on delay time
td(on)
VDD=380V, VGS=0/10V,
ID=11A, RG=6.8Ω
-
10
-
ns
Rise time
tr
-
5
-
Turn-off delay time
td(off)
-
44
70
Fall time
tf
-
5
9
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=480V, ID=11A
-
5.5
-
nC
Gate to drain charge
Qgd
-
22
-
Gate charge total
Qg
VDD=480V, ID=11A,
VGS=0 to 10V
-
45
60
Gate plateau voltage
V(plateau) VDD=480V, ID=11A
-
5.5
-
V
1C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
2C
o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.


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