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H27UCG8T2BTR-BC Datenblatt(Datasheet) 15 Page - Hynix Semiconductor

Teile-Nr. H27UCG8T2BTR-BC
Beschreibung  64Gb(8192M x 8bit) MLC NAND Flash
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Hersteller  HYNIX [Hynix Semiconductor]
Homepage  http://www.skhynix.com/ko/index.jsp
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H27UCG8T2BTR-BC
64Gb(8192M x 8bit) MLC NAND Flash
Rev 0.1 / Oct. 2012
15
Table 4 : Block failure
Figure 6 : Block replacement
Notes:
1. An error occurs on nth page of the Block A during Program or Erase operation.
2. Data in Block A is copied to same location in Block B which is valid block.
3. Nth page of block A which is in controller buffer memory is copied into nth page of Block B
4. Bad block table should be updated to prevent from erasing or programming Block A.
1.12. Bad Block Replacement
This device may have the invalid blocks when shipped from factory. An invalid block is one that contains one or
more bad bits. Over the lifetime of the device additional Bad Blocks may develop. In this case, the block has to
be replaced by copying the data to a valid block. These additional Bad Blocks can be identified as attempts to
program or erase them will give errors in the Status Register.
The failure of a page program operation does not affect the data in other pages in the same block. Bad block can
be replaced by re-programming the current data and copying the rest of the replaced block to an available valid
block. Refer to Table 4 and Figure 6 for the recommended procedure to follow if an error occurs during an
operation.
Operation
Recommended Procedure
Erase
Block Replacement
Program
Block Replacement
Read
ECC




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