Datenblatt-Suchmaschine für elektronische Bauteile |
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H27UCG8T2BTR-BC Datenblatt(PDF) 16 Page - Hynix Semiconductor |
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H27UCG8T2BTR-BC Datenblatt(HTML) 16 Page - Hynix Semiconductor |
16 / 56 page H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash Rev 0.1 / Oct. 2012 16 Symbol Min Typ Max Unit Valid Block Number NVB 2046 2132 Blocks Notes: 1. The 1st block is guaranteed to be a valid block at the time of shipment. 2. This single device has a maximum of 86 invalid blocks. 3. Invalid blocks are one that contains one or more bad bits. The device may contain bad blocks on shipment. Symbol Parameter Value Unit Min TA Ambient Operating Temperature (Commercial Temperature Range) 0 to 70 ℃ Ambient Operating Temperature (Extended Temperature Range) -25 to 85 ℃ Ambient Operating Temperature (Industrial Temperature Range) -40 to 85 ℃ TBIAS Temperature Under Bias -50 to 125 ℃ TSTG Storage Temperature -65 to 150 ℃ VIO Input or Output Voltage -0.6 to 4.6 V VCC Supply Voltage -0.6 to 4.6 V Notes: 1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SK hynix SURE Program and other relevant quality documents. 2. Minimum voltage may undershoot to -2V during transition and for less than 20ns during transitions. Maximum voltage may overshoot to Vcc+2V during transition and for less than 20ns during transitions. 2. Electrical Characteristics 2.1. Valid Blocks 2.2. Absolute Maximum Rating |
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Ähnliche Beschreibung - H27UCG8T2BTR-BC |
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