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H27UCG8T2BTR-BC Datenblatt(Datasheet) 17 Page - Hynix Semiconductor

Teile-Nr. H27UCG8T2BTR-BC
Beschreibung  64Gb(8192M x 8bit) MLC NAND Flash
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Hersteller  HYNIX [Hynix Semiconductor]
Homepage  http://www.skhynix.com/ko/index.jsp
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H27UCG8T2BTR-BC
64Gb(8192M x 8bit) MLC NAND Flash
Rev 0.1 / Oct. 2012
17
Parameter
Symbol
Test
Conditions
3.3V
Units
Min
Typ
Max
Power on reset current
ICC0
FFh command
input after
power on
-
-
50 per
device
mA
Operating
Current
Read
ICC1
tRC= tRC(min),
CE#=VIL,
IOUT=0 ㎃
-
-
50
mA
Program
ICC2
-
-
50
mA
Erase
ICC3
-
-
50
mA
Stand-by Current
(TTL)
ICC4
CE#=VIH,
WP#=0V/VCC
-
-
1
mA
Stand-by Current
(CMOS)
ICC5
CE#=VCC-0.2,
WP#=0V/VCC
-
10
50
uA
Input Leakage Current
VIN=0 to VCC(MAX)
-
-
±10
uA
Output Leakage Current
ILO
VOUT=0 to VCC(MAX)
-
-
±10
uA
Input High Voltage
VIH
-
Vccx0.8
-
Vcc+0.3
V
Input Low Voltage
VIL
-
-0.3
-
0.2xVcc
V
Output High Voltage Level
VOH
IOH=-400 ㎂
2.4
-
-
V
Output Low Voltage Level
VOL
IOL=2.1 ㎃
-
-
0.4
V
Output Low Current (R/B#)
IOL (R/B#)
VOL=0.4V
8
10
-
mA
Parameter
Value
2.7V ≤ VccQ ≤ 3.6V
Input Pulse Levels
0 V to VCC
Input Rise and Fall Times
5
Input and Output Timing Levels
VCC / 2
Output Load (2.7V-3.6V)
1 TTL GATE and CL=50㎊
Note:
These parameters are verified device characterization and are not 100% tested.
2.3. DC and Operating Characteristics
2.4. AC Test Conditions




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