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IRLZ44ZL Datenblatt(PDF) 1 Page - International Rectifier |
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IRLZ44ZL Datenblatt(HTML) 1 Page - International Rectifier |
1 / 12 page 3/2/04 www.irf.com 1 AUTOMOTIVE MOSFET PD - 95849 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 13.5mΩ ID = 51A Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175°C junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G Description ● Logic Level ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax Features IRLZ44Z IRLZ44ZS IRLZ44ZL D2Pak IRLZ44ZS TO-220AB IRLZ44Z TO-262 IRLZ44ZL Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS (Thermally limited) Single Pulse Avalanche Energyd mJ EAS (Tested ) Single Pulse Avalanche Energy Tested Value h IAR Avalanche Current à A EAR Repetitive Avalanche Energy g mJ TJ Operating Junction and TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw i Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 1.87 °C/W RθCS Case-to-Sink, Flat Greased Surface ik 0.50 ––– RθJA Junction-to-Ambient ik ––– 62 RθJA Junction-to-Ambient (PCB Mount) jk ––– 40 -55 to + 175 300 (1.6mm from case ) 10 lbf yin (1.1Nym) 80 0.53 ± 16 Max. 51 36 204 110 78 See Fig.12a, 12b, 15, 16 |
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Ähnliche Beschreibung - IRLZ44ZL |
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