Datenblatt-Suchmaschine für elektronische Bauteile |
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DAM9N30S Datenblatt(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM9N30S Datenblatt(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
1 / 4 page N-Channel Enhancement Mode MOSFET Features VDSS = 30V RDS(ON) Ty p.16mΩ @ VGS = 10V Improved dv/dt capability Fast switching Pb Free & RoHS Compliant Green Device Available Applications MB / VGA / Vcore POL Applications SMPS 2 SR Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID 9 A @ Tc = 100°C 5.7 Drain Current Pulsed@ TC = 25°C IDM 36 A Single Pulse Avalanche Energy EAS 32 mJ Single Pulse Avalanche Current IAS 8 A Maximum Power Dissipation PD 2.5 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to ambient R θJA 50 °C/W Aug.2018 DAM9N30S Note3 nd |
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