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74AHCT2G00DP Datenblatt(PDF) 2 Page - NXP Semiconductors |
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74AHCT2G00DP Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 17 page 2004 Jan 21 2 Philips Semiconductors Product specification 2-input NAND gate 74AHC2G00; 74AHCT2G00 FEATURES • Symmetrical output impedance • High noise immunity • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V – CDM EIA/JESD22-C101 exceeds 500 V. • Low power dissipation • Balanced propagation delays • SOT505-2 and SOT765-1 package • Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device. The 74AHC2G/AHCT2G00 provides the 2-input NAND gate function. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT AHC2G AHCT2G tPHL/tPLH propagation delay nA and nB to nY CL = 15 pF; VCC = 5 V 3.5 3.6 ns CI input capacitance 1.5 1.5 pF CPD power dissipation capacitance per gate CL = 50 pF; f = 1 MHz; notes 1 and 2 17 18 pF |
Ähnliche Teilenummer - 74AHCT2G00DP |
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Ähnliche Beschreibung - 74AHCT2G00DP |
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