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74AHCT2G00DC Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer 74AHCT2G00DC
Bauteilbeschribung  The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS device
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT2G00DC Datenblatt(HTML) 2 Page - NXP Semiconductors

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2004 Jan 21
2
Philips Semiconductors
Product specification
2-input NAND gate
74AHC2G00; 74AHCT2G00
FEATURES
• Symmetrical output impedance
• High noise immunity
• ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 500 V.
• Low power dissipation
• Balanced propagation delays
• SOT505-2 and SOT765-1 package
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74AHC2G/AHCT2G00 is a high-speed Si-gate CMOS
device.
The 74AHC2G/AHCT2G00 provides the 2-input NAND
gate function.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total load switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC2G
AHCT2G
tPHL/tPLH
propagation delay nA and nB to nY
CL = 15 pF; VCC = 5 V
3.5
3.6
ns
CI
input capacitance
1.5
1.5
pF
CPD
power dissipation capacitance per
gate
CL = 50 pF; f = 1 MHz;
notes 1 and 2
17
18
pF


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