WS7916S datasheet(1/6 Pages) WILLSEMI

Teilenummer	WS7916S

Bauteilbeschribung	CMOS High Gain GPS LNA

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Hersteller	WILLSEMI [Will Semiconductor Ltd.]

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WS7916S

Will Semiconductor Ltd.

1

Jun, 2017 - Rev. 1.3

WS7916S

CMOS High Gain GPS LNA

Descriptions

The WS7916S is a low noise amplifier (LNA) for GNSS

receiver applications (including GPS, GLONASS,

BeiDou and Galileo), available in a small 6-pin DFN

package. The WS7916S requires only one external

inductor for input matching.

The WS7916S is designed to achieve low power

dissipation and good performance.

Features



Operating frequency: 1550 MHz to 1615 MHz



Noise figure = 0.65 dB



Gain = 16.5 dB



Input 1 dB compression point = -5.5 dBm



Out-of-band input IP3 = +8.0 dBm



Supply voltage: 1.8 V to 3.1 V



Integrated supply decoupling capacitor



Digital On/Off switch (1.2 V logic high level)



Supply current: 6.9 mA



Power-down mode leakage current < 3

μA



One external matching inductor required



RF output internally matched to 50 Ohm



ESD protection: HBM > 2.0kV for all pins



Package: 6-pin DFN, 1.5 x 1.0 x 0.55 mm

3



Process: CMOS

Applications



Cell phones



Tablets



Other RF front-end modules

http//:www.sh-willsemi.com

DFN1510-6L (Bottom view)

Pin configuration (Top view)

S

= Device code

*

= Month code（A~Z）

Marking (Top view)

Order information

Device

Package

Shipping

WS7916S-6/TR

DFN1510-6L

3000/Reel&Tape

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