WS7930DB

Will Semiconductor Ltd.

3

Aug, 2018 _ Rev. 1.5

Quick Reference Data

C; input matched to 50 Ω with a 12 nH inductor. The

condition is applied unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

Test Condition

Supply voltage

1.8

2.8

3.1

V

Supply current

6.0

8.0

12.5

mA

Gain mode

6

9

12

μA

Bypass mode

Power gain

11.0

13.3

15.0

dB

Gain mode

-3.5

-4.5

dB

Bypass mode

NF

Noise figure

0.75

1.2

dB

Gain mode

Input 1dB compression point

f = 800 MHz

-6.5

dBm

Gain mode

+7.5

dBm

Bypass mode

Input third-order intercept point

f = 800 MHz

+4.0

dBm

Gain mode

+11.5

dBm

Bypass mode

Recommended Operating Conditions

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Supply voltage

1.8

2.8

3.1

V

Temp

Ambient temperature

-40

+25

+85

C

Input voltage on pin 6 (EN)

Bypass mode

0

0.3

V

Gain mode

1.2

V

Absolute Maximum Ratings

Maximum ratings are absolute ratings, exceeding only one of these values may cause irreversible damage to

the integrated circuit.

Symbol

Parameter

Condition

Min

Max

Unit

Supply voltage

-0.3

3.1

V

Input voltage on pin EN

-0.3

3.1

V

Input voltage on pin RFIN

-0.3

3.1

V

Input voltage on pin RFOUT

-0.3

3.1

V

RF input power

25

dBm

Storage temperature

-65

+150

°C

Junction temperature

150

°C

ESD capability all pins

Human Body Model (HBM)

±2000

V