Datenblatt-Suchmaschine für elektronische Bauteile |
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EMD03N06ES Datenblatt(PDF) 4 Page - Excelliance MOS Corp. |
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EMD03N06ES Datenblatt(HTML) 4 Page - Excelliance MOS Corp. |
4 / 7 page 2016/10/25 p.4 EMD03N06ES V ‐ Drain‐Source Voltage( V ) 0 0 50 DS 1 2 8.0V V = 10V 100 150 7.0V GS 3 4 5 On‐Region Characteristics 250 200 On‐Resistance Variation with Drain Current and Gate Voltage 1.6 0.8 0 1.2 1.0 1.4 50 100 2.2 1.8 2.0 2.4 150 200 8.0 V 10 V 250 I ‐ Drain Current( A ) D GS V = 7.0 V On‐Resistance Variation with Temperature T ‐ Junction Temperature (°C) 0.4 ‐50 0.7 1.0 0 J ‐25 25 D I = 24A V = 10V 1.3 1.6 1.9 GS 125 50 75 100 150 On‐Resistance Variation with Gate‐Source Voltage T = 125°C V ‐ Gate‐Source Voltage( V ) 0.001 2 0.003 0.007 0.005 GS 4 6 T = 25°C A A 0.015 0.011 0.009 0.013 0.017 810 I = 24 A D T = ‐55°C V ‐ Gate‐Source Voltage( V ) 2 20 0 40 3 GS V = 10V 80 60 100 120 DS A 5 4 6 25°C 125°C Transfer Characteristics Body Diode Forward Voltage Variation with Source Current and Temperature 25°C T = 125°C V ‐ Body Diode Forward Voltage( V ) 0.01 0 0.1 1 0.4 SD 0.2 0.6 V = 0V 10 100 1000 A GS 1.0 0.8 1.2 ‐55°C 1.4 TYPICAL CHARACTERISTICS |
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