Datenblatt-Suchmaschine für elektronische Bauteile |
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BUK7520-55A Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BUK7520-55A Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 15 page Philips Semiconductors BUK7520-55A; BUK7620-55A TrenchMOS™ standard level FET Product specification Rev. 01 — 18 January 2001 2 of 15 9397 750 07751 © Philips Electronics N.V. 2001. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) − 55 V ID drain current (DC) Tmb =25 °C; VGS =10V − 54 A Ptot total power dissipation Tmb =25 °C − 118 W Tj junction temperature − 175 °C RDSon drain-source on-state resistance VGS = 10 V; ID =25A Tj =25 °C17 20 m Ω Tj = 175 °C − 40 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) − 55 V VDGR drain-gate voltage (DC) RGS =20kΩ− 55 V VGS gate-source voltage (DC) −±20 V ID drain current (DC) Tmb =25 °C; VGS =10V; Figure 2 and 3 − 54 A Tmb = 100 °C; VGS =10V; Figure 2 − 38 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 − 217 A Ptot total power dissipation Tmb =25 °C; Figure 1 − 118 W Tstg storage temperature −55 +175 °C Tj operating junction temperature −55 +175 °C Source-drain diode IDR reverse drain current (DC) Tmb =25 °C − 54 A IDRM pulsed reverse drain current Tmb =25 °C; pulsed; tp ≤ 10 µs − 217 A Avalanche ruggedness WDSS non-repetitive avalanche energy unclamped inductive load; ID =48A; VDS ≤ 55 V; VGS = 10 V; RGS =50 Ω; starting Tmb =25 °C − 115 mJ |
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