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High Speed Super Low Power SRAM
256K-Word By 8 Bit
CS18LV20483
6
Rev. 1.0
Chiplus reserves the right to change product or specification without notice.
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
Parameter
Name
Parameter
Test Conduction
MIN
TYP(1)
MAX Unit
VIL
Guaranteed Input Low
Voltage
(2)
-0.5
0.8
V
VIH
Guaranteed Input High
Voltage
(2)
2.0
Vcc+0.2
V
IIL
Input Leakage Current VCC=MAX, VIN=0 to VCC
-1
1
uA
IOL
Output Leakage
Current
VCC=MAX, /CE=VIN, or
/OE=VIN , VIO=0V to VCC
-1
1
uA
VOL
Output Low Voltage
VCC=MAX, IOL = 2mA
0.4
V
VOH
Output High Voltage
VCC=MIN, IOH = -1mA
2.4
V
ICC
Operating Power
Supply Current
/CE=VIL, IDQ=0mA, F=FMAX
(3)
25
mA
ICCSB
Standby Supply - TTL
/CE=VIH, IDQ=0mA,
1
mA
ICCSB1
Standby Current
-CMOS
/CE≧VCC-0.2V, VIN≧
VCC-0.2V or VIN≦0.2V
0.5
4
uA
1. Typical characteristics are at TA = 25
oC.
2. These are absolute values with respect to device ground and all overshoots due to system or
tester notice are included.
3. Fmax = 1/tRC.
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC)
Parameter Name
Parameter
Test Conduction
MIN
TYP MAX Unit
VDR
VCC for Data Retention /CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
1.5
V
ICCDR
Data Retention Current /CE≧VCC-0.2V, VCC=1.5V
VIN≧VCC-0.2V or VIN≦0.2V
0.3
2
uA
TCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery
Time
See Retention Waveform
tRC (1)
ns
1. Read Cycle Time.