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GD9FU1G8F2AMG Datenblatt(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

Teilenummer GD9FU1G8F2AMG
Bauteilbeschribung  Single level cell technology
Download  55 Pages
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Hersteller  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Direct Link  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD9FU1G8F2AMG Datenblatt(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc.

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4
1. FEATURES
Single level cell technology
Number of Valid Blocks
- Min 1004 blocks
ONFI 1.0 Compatible
- Max 1024 blocks
Power Supply Voltage
Operating Current
- VCC/VCCQ = 1.7 ~ 1.95v(GD9FS)
- Read(25ns cycle): 15mA
- VCC/VCCQ = 2.7 ~ 3.6v (GD9FU)
- Program(Typ): 15mA
- Erase(Typ): 15mA
Memory Cell Organization
- Standby(Max):50uA (CMOS)
- Page size:
X8: 2K + 128bytes
Reliability
X16: 1K + 64words
- P/E cycles with ECC: 100K
- Block size:
- Data retention: 10 Years
X8: 128K + 8K bytes
X16: 64K + 4K words
ECC Requirement
- Plane size: 1024 blocks
- 4bit/512 bytes
- Device size: 1024 blocks
Operating Temperature
Page Read / Program time
- Industrial (I): -40C ~ 85C
- Random Read Time (tR): 25us Max.
- Industrial (J): -40C ~ 105C
- Sequential Access Time
3.3v Device: 25ns Min.
Chip Enable Don’t Care Option
1.8v Device:45ns Min.
Security
- Page Program(tPROG): 300us Typ.
- OTP area
- Non-volatile protection
Block Erase
Package
- Block Erase Time(tBERS): 3ms Typ.
- TSOPI 48 (12mm x 20mm)
- FBGA63 (9mm x 11mm)
- FBGA48 (6mm x 8mm)


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