Datenblatt-Suchmaschine für elektronische Bauteile |
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GD9FU1G8F2AMG Datenblatt(PDF) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD9FU1G8F2AMG Datenblatt(HTML) 4 Page - GigaDevice Semiconductor (Beijing) Inc. |
4 / 55 page GD9Fx1GxF2A 4 1. FEATURES ◆ Single level cell technology ◆ Number of Valid Blocks - Min 1004 blocks ◆ ONFI 1.0 Compatible - Max 1024 blocks ◆ Power Supply Voltage ◆ Operating Current - VCC/VCCQ = 1.7 ~ 1.95v(GD9FS) - Read(25ns cycle): 15mA - VCC/VCCQ = 2.7 ~ 3.6v (GD9FU) - Program(Typ): 15mA - Erase(Typ): 15mA ◆ Memory Cell Organization - Standby(Max):50uA (CMOS) - Page size: X8: 2K + 128bytes ◆ Reliability X16: 1K + 64words - P/E cycles with ECC: 100K - Block size: - Data retention: 10 Years X8: 128K + 8K bytes X16: 64K + 4K words ◆ ECC Requirement - Plane size: 1024 blocks - 4bit/512 bytes - Device size: 1024 blocks ◆ Operating Temperature ◆ Page Read / Program time - Industrial (I): -40C ~ 85C - Random Read Time (tR): 25us Max. - Industrial (J): -40C ~ 105C - Sequential Access Time 3.3v Device: 25ns Min. ◆ Chip Enable Don’t Care Option 1.8v Device:45ns Min. ◆ Security - Page Program(tPROG): 300us Typ. - OTP area - Non-volatile protection ◆ Block Erase ◆ Package - Block Erase Time(tBERS): 3ms Typ. - TSOPI 48 (12mm x 20mm) - FBGA63 (9mm x 11mm) - FBGA48 (6mm x 8mm) |
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