Datenblatt-Suchmaschine für elektronische Bauteile |
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GD25B16C Datenblatt(PDF) 45 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25B16C Datenblatt(HTML) 45 Page - GigaDevice Semiconductor (Beijing) Inc. |
45 / 53 page 3.3V Uniform Sector Dual and Quad Serial Flash GD25B16C 45 8.6. AC CHARACTERISTICS (T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit. fC Serial Clock Frequency For: Dual I/O(BBH), Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O Without High Performance Mode), on 3.0V-3.6V power supply 104 MHz fC1 Serial Clock Frequency For: Dual I/O(BBH), Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O Without High Performance Mode), on 2.7V-3.0V power supply 80 MHz fC2 Serial Clock Frequency For: Dual I/O(BBH), Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O With High Performance Mode), on 2.7V-3.6V power supply 120 MHz fR Serial Clock Frequency For: Read(03H) 80 MHz tCLH Serial Clock High Time 4 ns tCLL Serial Clock Low Time 4 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns tSLCH CS# Active Setup Time 5 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time(read/write) 20 ns tSHQZ Output Disable Time 6 ns tCLQX Output Hold Time 1.2 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tCLQV Clock Low To Output Valid 7 ns tDP CS# High To Deep Power-Down Mode 20 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 20 μs tRES2 CS# High To Standby Mode With Electronic Signature Read 20 μs tSUS CS# High To Next Command After Suspend 20 μs tRS Latency Between Resume And Next Suspend 100 μs tRST CS# High To Next Command After Reset (Except From Erase) 30 μs tRST_E CS# High To Next Command After Reset (From erase) 12 ms tW Write Status Register Cycle Time 5 30 ms tBP1 Byte Program Time( First Byte) 30 50 μs tBP2 Additional Byte Program Time ( After First Byte) 2.5 12 μs tPP Page Programming Time 0.6 2.4 ms tSE Sector Erase Time(4K Bytes) 45 300 ms tBE1 Block Erase Time(32K Bytes) 0.15 1.2 s |
Ähnliche Teilenummer - GD25B16C |
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Ähnliche Beschreibung - GD25B16C |
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