GD25B16C datasheet(45/53 Pages) GIGADEVICE

Teilenummer	GD25B16C

Bauteilbeschribung	3.3V Uniform Sector Dual and Quad Serial Flash

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Hersteller	GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]

Direct Link	http://www.gigadevice.com/

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3.3V Uniform Sector

Dual and Quad Serial Flash

GD25B16C

45

8.6. AC CHARACTERISTICS

(T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)

Symbol

Parameter

Min.

Typ.

Max.

Unit.

fC

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O

Without High Performance Mode), on 3.0V-3.6V power supply

104

MHz

fC1

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O

Without High Performance Mode), on 2.7V-3.0V power supply

80

MHz

fC2

Serial Clock Frequency For: Dual I/O(BBH),

Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O

With High Performance Mode), on 2.7V-3.6V power supply

120

MHz

fR

Serial Clock Frequency For: Read(03H)

80

MHz

tCLH

Serial Clock High Time

4

ns

tCLL

Serial Clock Low Time

4

ns

tCLCH

Serial Clock Rise Time (Slew Rate)

0.1

V/ns

tCHCL

Serial Clock Fall Time (Slew Rate)

0.1

V/ns

tSLCH

CS# Active Setup Time

5

ns

tCHSH

CS# Active Hold Time

5

ns

tSHCH

CS# Not Active Setup Time

5

ns

tCHSL

CS# Not Active Hold Time

5

ns

tSHSL

CS# High Time（read/write）

20

ns

tSHQZ

Output Disable Time

6

ns

tCLQX

Output Hold Time

1.2

ns

tDVCH

Data In Setup Time

2

ns

tCHDX

Data In Hold Time

2

ns

tCLQV

Clock Low To Output Valid

7

ns

tDP

CS# High To Deep Power-Down Mode

20

μs

tRES1

CS# High To Standby Mode Without Electronic Signature

Read

20

μs

tRES2

CS# High To Standby Mode With Electronic Signature Read

20

μs

tSUS

CS# High To Next Command After Suspend

20

μs

tRS

Latency Between Resume And Next Suspend

100

μs

tRST

CS# High To Next Command After Reset (Except From

Erase)

30

μs

tRST_E

CS# High To Next Command After Reset (From erase)

12

ms

tW

Write Status Register Cycle Time

5

30

ms

tBP1

Byte Program Time( First Byte)

30

50

μs

tBP2

Additional Byte Program Time ( After First Byte)

2.5

12

μs

tPP

Page Programming Time

0.6

2.4

ms

tSE

Sector Erase Time(4K Bytes)

45

300

ms

tBE1

Block Erase Time(32K Bytes)

0.15

1.2

s

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