Datenblatt-Suchmaschine für elektronische Bauteile |
|
BA01207 Datenblatt(PDF) 1 Page - Mitsubishi Electric Semiconductor |
|
BA01207 Datenblatt(HTML) 1 Page - Mitsubishi Electric Semiconductor |
|
1 / 1 page MITSUBISHI SEMICONDUCTOR <GaAs HBT> BA01207 Specifications are subject to change without notice. GaAs HBT HYBRID IC MITSUBISHI ELECTRIC CORP. Created Date: Apr.2004 DESCRIPTION The BA01207 GaAs RF amplifier designed for J-cdmaOne hand-held phone. FEATURES Low voltage Vc =3.5V High power Po=27.5dBm High gain Gp=27.5dB@Po=27.5dBm 2stage amplifier Internal input* and output matching *Use DC block for input port APPLICATION N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is OQPSK) hand set. ABSOLUTE MAXIMUM RATINGS (Ta=25 °C) Symbol Parameter Condition Ratings* Unit Vcc Supply voltage of HPA 6 V Pin Input power ZG=ZL=50 Ω 7 dBm Tc(op) Operating case temp. -20 ∼ +85 °C Tstg Storage temp. -30 ∼ +125 °C *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50 Ω) Limits Symbol Parameter Test conditions MIN TYP MAX Unit f Frequency 887 - 925 MHz Iq Quiescent current Vc=3.5V,Vcb=Vref=2.8V No Signal - 55 70 mA Ict *1 Total current - 395 420 mA Icb+Iref Total current - 5.3 10 mA hadd Power added efficiency - 40 - % Gain Power Gain 25 27.5 - dB Adjacent channel power at 900KHz - -50 -47 dBc ACP *2 Adjacent channel power at 1.98MHz - -60 -57 dBc 2sp 2nd harmonics - -30 -27 dBc 3sp 3rd harmonics - -45 -30 dBc Rxnoise Noise in RX band Po=27.5dBm (IS-95B) Vc1=Vc2=3.5V Vcb=Vref=2.8V - -138 -135 dBm/Hz Ict *1 Total current - 107 122 mA Icb+Iref Total current - 2.5 5.5 mA Gain Power Gain 21.5 24 - dB Adjacent channel power at 900KHz Po=15dBm (IS-95B) Vc1=Vc2=1.2V Vcb=Vref=2.8V - -55 -47 dBc ACP *2 Adjacent channel power at 1.98MHz - -66 -58 dBc *1: Ict=Ic1+Ic2, *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band) Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. 1 2 3 7 6 5 4.5 1:Pin 2:Vc1 3:Vc2 4:GND 5:Pout 6:Vcb 7:Vref 8:GND 1.5max. Outline Drawing 8 4 unit : milimeter |
Ähnliche Teilenummer - BA01207 |
|
Ähnliche Beschreibung - BA01207 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |