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FDZ7296 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDZ7296 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page November 2004 ©2004 Fairchild Semiconductor Corporation FDZ7296 Rev B (W) FDZ7296 30V N-Channel PowerTrench ® BGA MOSFET General Description Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Applications • High-side Mosfet in DC-DC converters for Server and Notebook applications Features 11 A, 30 V. RDS(ON) = 8.5 m Ω @ V GS = 10 V RDS(ON) = 12 m Ω @ V GS = 4.5 V • Occupies only 0.10 cm 2 of PCB area: 1/3 the area of SO-8. • Ultra-thin package: less than 0.80 mm height when mounted to PCB. • High performance trench technology for extremely low RDS(ON) • Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling S S S S S S D S S S S G S D D D D D Pin 1 S D G Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 11 A – Pulsed 20 PD Power Dissipation (Steady State) (Note 1a) 2.1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 60 °C/W RθJB Thermal Resistance, Junction-to-Ball (Note 1) 6.3 RθJC Thermal Resistance, Junction-to-Case (Note 1) 0.6 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 7296 FDZ7296 7’’ 8mm 3000 units Top Pin 1 |
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