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FDZ7296 Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer FDZ7296
Bauteilbeschribung  30V N-Channel PowerTrench BGA MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ7296 Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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November 2004
©2004 Fairchild Semiconductor Corporation
FDZ7296 Rev B (W)
FDZ7296
30V N-Channel PowerTrench
® BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
minimizes both PCB space and RDS(ON).
This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• High-side Mosfet in DC-DC converters for Server
and Notebook applications
Features
11 A, 30 V.
RDS(ON) = 8.5 m
Ω @ V
GS = 10 V
RDS(ON) = 12 m
Ω @ V
GS = 4.5 V
Occupies only 0.10 cm
2 of PCB area:
1/3 the area of SO-8.
Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
High performance trench technology for extremely
low RDS(ON)
Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
S
S
S
S
S
S
D
S
S
S
S
G
S
D
D
D
D
D
Pin 1
S
D
G
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous
(Note 1a)
11
A
– Pulsed
20
PD
Power Dissipation (Steady State)
(Note 1a)
2.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
60
°C/W
RθJB
Thermal Resistance, Junction-to-Ball
(Note 1)
6.3
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
0.6
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
7296
FDZ7296
7’’
8mm
3000 units
Top
Pin 1


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