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STQ3NK50ZR-AP Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer STQ3NK50ZR-AP
Bauteilbeschribung  N-CHANNEL 500V - 2.8ohm - 2.3A TO-92/DPAK/IPAK Zener-Protected SuperMESH MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1)
ID ≤ 2 di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS
Table 4: Thermal Data
(#) When mounted on 1inch² FR4, 2 Oz copper board.
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in-back-to-back Zener diodes have specifically been designed to enchance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol
Parameter
Value
Unit
DPAK/IPAK
TO-92
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
2.3
0.5
A
ID
Drain Current (continuous) at TC = 100°C
1.45
0.32
A
IDM ( )
Drain Current (pulsed)
9.2
2
A
PTOT
Total Dissipation at TC = 25°C
45
3
W
Derating Factor
0.36
0.025
W/°C
VESD(G-S)
Gate source ESD (HBM-C=100 pF, R= 1.5K
Ω)
2000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
DPAK
IPAK
TO-92
Unit
Rthj-case
Thermal Resistance Junction-case Max
2.77
--
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
50 (#)
100
120
°C/W
Rthj-lead
Thermal Resistance Junction-lead Max
--
--
40
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
275
260
°C
Symbol
Parameter
Max. Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
2.3
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
120
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V


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