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ISCL6920 Datenblatt(Datasheet) 2 Page - Inchange Semiconductor Company Limited

Teile-Nr. ISCL6920
Beschreibung  isc Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
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isc Product Specification
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
ISCL6920
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BVEBO
Emitter-Base breakdown voltage
IE= 500uA; Ic= 0
6
V
BVCEO
Collector-Emitter breakdown voltage
IC= 5mA; IB= 0
800
V
BVCBO
Collector-Base breakdown voltage
IC= 500uA; IB= 0
1500
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 11A; IB=2.75A
3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 11A; IB=2.75A
1.5
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
8
hFE-2
DC Current Gain
IC= 11A; VCE= 5V
5.5
8.5




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