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PHE13009 Datenblatt(PDF) 5 Page - WeEn Semiconductors |
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PHE13009 Datenblatt(HTML) 5 Page - WeEn Semiconductors |
5 / 8 page WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 Fig.13. Reverse bias safe operating area (T j < Tjmax) for -V be = 5V,3V and 1V. Fig.14. Test circuit for reverse bias safe operating area. V clamp < 700V; Vcc = 150V; -Vbe = 5V,3V & 1V; L B = 1µH; LC = 200µH 0 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 12 14 VCEclamp/V IC/A -5V -3V -1V LB IBon -VBB LC T.U.T. VCC PROBE POINT VCL(RBSOAR) March 2018 5 Rev 1. 100 |
Ähnliche Teilenummer - PHE13009 |
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Ähnliche Beschreibung - PHE13009 |
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