TP0205AD datasheet(2/4 Pages) VISHAY

Teilenummer	TP0205AD

Bauteilbeschribung	P-Channel 20-V (D-S) MOSFET, Low-Threshold

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Hersteller	VISHAY [Vishay Siliconix]

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TP0205A/AD

Vishay Siliconix

New Product

www.vishay.com

11-2

Document Number: 70869

S-04279—Rev. B, 16-Jul-01

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typb

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VDS = 0 V, ID = –10 mA

–20

–24

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = –50 mA

–0.4

–0.9

–1.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"2

"100

VDS = –20 V, VGS = 0 V

–0.001

–100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = –20 V, VGS = 0 V, TJ = 55_C

–1

mA

VGS = –4.5 V, VDS = –8.0 V

–400

On-State Drain Currenta

ID(on)

VGS = –2.5 V, VDS = –5.0 V

–120

mA

VGS = –4.5 V, ID = –180 mA

2.6

3.8

W

Drain-Source On-State Resistancea

rDS(on)

VGS = –2.5 V, ID = –75 mA

4.0

5.0

W

Forward Transconductancea

gfs

VDS = –2.5 V, ID = –50 mA

200

mS

Diode Forward Voltagea

VSD

IS = –50 mA, VGS = 0 V

–0.7

–1.2

V

Dynamic

Total Gate Charge

Qg

350

450

Gate-Source Charge

Qgs

VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA

25

pC

Gate-Drain Charge

Qgd

125

Input Capacitance

Ciss

20

Output Capacitance

Coss

VDS = –5.0 V, VGS = 0 V, f = 1 MHz

14

pF

Reverse Transfer Capacitance

Crss

DS

GS

5

Switching c

Turn-On Delay Time

td(on)

7

12

Rise Time

tr

VDD = –3.0 V, RL = 100 W

25

35

Turn-Off Delay Time

td(off)

VDD = –3.0 V, RL = 100 W

ID = –0.25 A, VGEN = –4.5 V, RG = 10 W

19

30

ns

Fall Time

tf

9

15

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

VPOJ

b.

For design only, not subject to production testing.

c.

Switching time is essentially independent of operating temperature.

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