Datenblatt-Suchmaschine für elektronische Bauteile |
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STD9N10T4 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STD9N10T4 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STD9N10/STD9N10-1 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 6. Off Table 7. On (1) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Dynamic Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 9. Switching On Table 10. Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA; VGS = 0 100 V IDSS Zero Gate Voltage VDS = Max Rating 250 µA Drain Current (VGS = 0) VDS = Max Rating x 0.8; Tc = 125 °C 1000 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ± 100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA2 3 4 V RDS(on) Static Drain-source On Resistance VGS = 10V; ID = 4.5 A VGS = 10V; ID = 4.5 A; Tc = 100 °C 0.23 0.27 0.54 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max; ID = 4.5 A 2 4 S Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 330 450 pF Coss Output Capacitance 90 120 pF Crss Reverse Transfer Capacitance 25 40 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Time VDD = 50 V; ID = 4.5 A; RG = 4.7 Ω 10 15 ns tr Rise Time VGS = 10 V (see test circuit, Figure 22) 40 60 ns (di/dt)on Turn-on Current Slope VDD = 80 V; ID = 9 A; RG = 4.7 Ω VGS = 10 V (see test circuit, Figure 22) 440 A/ µs Qg Total Gate Charge VDD = 80 V; ID = 9 A; VGS = 10 V 15 25 nC Qgs Gate-Source Charge 6 nC Qgd Gate-Drain Charge 5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 80 V; ID = 9 A; RG = 4.7 Ω 15 25 ns tf Fall Time VGS = 10 V (see test circuit, Figure 24) 25 35 ns tc Cross-over Time 50 70 ns |
Ähnliche Teilenummer - STD9N10T4 |
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Ähnliche Beschreibung - STD9N10T4 |
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