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PD200HB120 Datenblatt(PDF) 1 Page - SanRex Corporation

Teilenummer PD200HB120
Bauteilbeschribung  THYRISTOR MODULE
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Hersteller  SANREX [SanRex Corporation]
Direct Link  http://www.sanrex.com
Logo SANREX - SanRex Corporation

PD200HB120 Datenblatt(HTML) 1 Page - SanRex Corporation

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SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK(PD,PE)200HB
THYRISTOR MODULE
UL;E76102
(M)
92
12
18
M8×14
♯110TAB
(2.8.0.5T)
80±0.3
2
26
26
7
4-φ6(M5)
R8.0
Unit
:A
Symbol
Item
Conditions
Ratings
200
Unit
IT(AV)
*Average On-State Current
IT(RMS)
*R.M.S. On-State Current
Single phase, half wave, 180
°conduction, Tc:74℃
Single phase, half wave, 180
°conduction, Tc:74℃
ITSM
*Surge On-State Current
I2t
*I2t
PGM
Peak Gate Power Dissipation
PG(AV)
Average Gate Power Dissipation
IFGM
Peak Gate Current
VFGM
Peak Gate Voltage
(Forward)
12cycle, 50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
A
310
A
5000/5500
A
125000
10
A2S
W
3
VRGM
Peak Gate Voltage
(Reverse)
di/dt
Critical Rate of Rise of On-State Current
IG
=100mA,Tj=25℃,VD12VDRM,dIG/dt=0.1A/μs
VISO
*Isolation Breakdown Voltage(R.M.S.)
Tj
*Operating Junction Temperature
Tstg
*Storage Temperature
Mounting
Torque
Mass
Mounting
(M5)
Terminal
(M8)
A.C. 1 minute
Recommended Value 1.5-2.5
(15-25)
Recommended Value 8.8-10
(90-105)
Typical Value
3
W
A
10
V
5
V
200
A/
μs
2500
V
−40 to +125
−40 to +125
2.7
(28)
11
(115)
510
N
・m
(㎏f・B)
g
Symbol
Item
Conditions
Ratings
50
Unit
IDRM
Repetitive Peak Off-State Current, max.
IRRM
*Repetitive Peak Reverse Current, max.
at VDRM, Single phase, half wave, Tj
=125℃
at VDRM, Single phase, half wave, Tj
=125℃
VTM
*Peak On-State Voltage, max.
IGT/VGT
Gate Trigger Current/Voltage, max.
VGD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
IH
Holding Current, typ.
On-State Current 750A, Tj
=125℃ Inst. measurement
Tj
=25℃,IT=1A,VD=6V
mA
50
mA
1.50
V
100/3
Tj
=125℃,VD12VDRM
IT
=250A,IG=100mA,Tj=25℃,VD12VDRM,dIG/dt=0.1A/μs
0.25
mA/V
V
10
Tj
=125℃,VD23VDRM,Exponential wave.
Tj
=25℃
IL
Lutching Current, typ.
Rth
(j-c) *Thermal Impedance, max.
Tj
=25℃
Junction to case
500
μs
V/
μs
50
mA
100
mA
0.18
℃/W
■Electrical Characteristics
■Maximum Ratings
Symbol
Item
PK200HB120
PD200HB120
PE200HB120
Ratings
PK200HB160
PD200HB160
PE200HB160
Unit
VRRM
*Repetitive Peak Reverse Voltage
1200
1600
V
1300
1700
V
1200
1600
V
VRSM
VDRM
*Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
*mark:Thyristor and Diode part. No mark:Thyristor part
Power Thyristor/Diode Module PK200HB series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 1,600V are available.
Isolated mounting base
IT(AV)200A, IT(RMS)310A, ITSM 5500A
di/dt 200 A/
μs
dv/dt 500V/
μs
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
K1
(A2)
(K2)
A1K2
G1
K2
G2
1
2
3
K1
(A2)
(K2)
A1K2
G1
K2
1
2
3
K1
(A2)
(K2)
A1K2
K2
G2
1
2
3
PK
PD
PE


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