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FDC6432SH Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDC6432SH Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page April 2003 2003 Fairchild Semiconductor Corp. FDC6432SH Rev B (W) FDC6432SH 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET General Description This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package. Applications DC/DC converter Power management Features • SyncFET RDS(ON) = 90 mΩ @ VGS = 10 V 2.4 A, 30V RDS(ON) = 105 mΩ @ VGS = 4.5 V • P channel RDS(ON) = 90 mΩ @ VGS = –4.5 V –2.5 A, –12V RDS(ON) = 125 mΩ @ VGS = –2.5 V R RDS(ON) = 220 mΩ @ VGS = –1.8 V • Fast switching speed. • High performance trench technology for extremely low RDS(ON) D1 S2 G1 D2 S1 G2 SuperSOT -6 TM Pin 1 SuperSOT™-6 Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units Q1 (N) Q2 (P) VDSS Drain-Source Voltage 30 –12 V VGSS Gate-Source Voltage ±16 ±8 V ID Drain Current– Continuous (Note 1a) 2.4 –2.5 A – Pulsed 7 –7 Power Dissipation for Single Operation (Note 1a) 1.3 PD (Note 1b) 0.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 100 °C/W (Note 1b) 175 RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .432 FDC6432SH 7’’ 8mm 3000 units 3 2 1 4 5 6 Q1(N) Q2(P) D1,2 S1 D1,2 G2 S2 G1 |
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