Datenblatt-Suchmaschine für elektronische Bauteile |
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MMG3006NT1 Datenblatt(PDF) 22 Page - NXP Semiconductors |
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MMG3006NT1 Datenblatt(HTML) 22 Page - NXP Semiconductors |
22 / 24 page 22 RF Device Data NXP Semiconductors MMG3006NT1 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3100: General Purpose Amplifier Biasing AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation Software .s2p File Development Tools Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.nxp.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool. FAILURE ANALYSIS At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third party vendors with moderate success. For updates contact your local NXP Sales Office. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 Initial Release of Data Sheet 1 Mar. 2008 Corrected Table 7, Moisture Sensitivity Level Rating from 3 to 1, p. 3 Corrected S--Parameter table frequency column label to read “MHz” versus “GHz”, pp. 17, 18 2 Mar. 2008 Corrected Tape and Reel information from 330 mm to 12 mm, p. 1 Corrected Figs. 24, 35, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis (ACPR) unit of measure to dBc, pp. 12, 16 3 May 2010 Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current, p. 4 Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation, Application Notes, p. 23 Added .s2p File availability to Product Software, p. 23 4 Jan. 2011 Corrected temperature at which ThetaJC is measured from 25Cto89C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 Removed IDC bias callout from Table 10, Common Source S--Parameters heading as bias is not a controlled value, pp. 17--18 Added Printed Circuit Boards availability to Development Tools, p. 23 5 Sept. 2014 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test results of the device, p. 1 Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Removed Fig. 2, Collector Current versus Bias Voltage at Pin #1, p. 3 Added Fig. 38, Product Marking, p. 18 Added Failure Analysis information, p. 22 (continued) |
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