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MMG3006NT1 Datenblatt(PDF) 22 Page - NXP Semiconductors

Teilenummer MMG3006NT1
Bauteilbeschribung  Heterojunction Bipolar Transistor Technology (InGaP HBT)
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMG3006NT1 Datenblatt(HTML) 22 Page - NXP Semiconductors

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RF Device Data
NXP Semiconductors
MMG3006NT1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN3100: General Purpose Amplifier Biasing
 AN3778: PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat Dissipation
Software
 .s2p File
Development Tools
 Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.nxp.com, and select the “Part Number” link. Go to Software
& Tools on the part’s Product Summary page to download the respective tool.
FAILURE ANALYSIS
At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis. In
cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third
party vendors with moderate success. For updates contact your local NXP Sales Office.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Jan. 2008
 Initial Release of Data Sheet
1
Mar. 2008
 Corrected Table 7, Moisture Sensitivity Level Rating from 3 to 1, p. 3
 Corrected S--Parameter table frequency column label to read “MHz” versus “GHz”, pp. 17, 18
2
Mar. 2008
 Corrected Tape and Reel information from 330 mm to 12 mm, p. 1
 Corrected Figs. 24, 35, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power
y--axis (ACPR) unit of measure to dBc, pp. 12, 16
3
May 2010
 Added new Fig. 3, Third Order Output Intercept Point versus Output Power and Supply Current,
p. 4
 Added AN3778, PCB Layout Guidelines for PQFN/QFN Style Packages Requiring Thermal Vias for Heat
Dissipation, Application Notes, p. 23
 Added .s2p File availability to Product Software, p. 23
4
Jan. 2011
 Corrected temperature at which ThetaJC is measured from 25Cto89C and added “no RF applied” to
Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no
RF signal applied, p. 1
 Removed IDC bias callout from Table 10, Common Source S--Parameters heading as bias is not a
controlled value, pp. 17--18
 Added Printed Circuit Boards availability to Development Tools, p. 23
5
Sept. 2014
 Table 2, Maximum Ratings: updated Junction Temperature from 150C to 175C to reflect recent test
results of the device, p. 1
 Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
 Removed Fig. 2, Collector Current versus Bias Voltage at Pin #1, p. 3
 Added Fig. 38, Product Marking, p. 18
 Added Failure Analysis information, p. 22
(continued)


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