MMG3012NT1 datasheet(3/14 Pages) NXP

Teilenummer	MMG3012NT1

Bauteilbeschribung	Heterojunction Bipolar Transistor Technology (InGaP HBT)

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MMG3012NT1

3

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

VCC =5 Vdc

10

25

0

TC =85C

f, FREQUENCY (GHz)

Figure 2. Small--Signal Gain (S21) versus

Frequency

20

15

12

34

25C

--40C

4

--40

0

S22

f, FREQUENCY (GHz)

Figure 3. Input/Output Return Loss versus

Frequency

S11

--10

--20

--30

12

3

20

7

21

10

Pout, OUTPUT POWER (dBm)

Figure 4. Small--Signal Gain versus Output

Power

19

17

15

13

11

12

14

9

3.5

3

2.5

2

1.5

1

0.5

13

20

19

18

16

14

f, FREQUENCY (GHz)

Figure 5. P1dB versus Frequency

17

15

5.4

0

100

4

VCC, COLLECTOR VOLTAGE (V)

Figure 6. Collector Current versus Collector

Voltage

80

60

20

4.2

5

5.2

40

4.4

4.6

4.8

4

21

36

0

f, FREQUENCY (GHz)

Figure 7. Third Order Output Intercept Point

versus Frequency

33

30

27

24

12

3

18

16

VCC =5 Vdc

900 MHz

2140 MHz

1960 MHz

2600 MHz

3500 MHz

VCC =5 Vdc

1 MHz Tone Spacing

Ähnliche Beschreibung - MMG3012NT1

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