FQP6N50C datasheet(3/8 Pages) FAIRCHILD

Teilenummer	FQP6N50C

Bauteilbeschribung	500V N-Channel MOSFET

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Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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FQP6N50C Rev. A

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs.

Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage

Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2

468

10

-1

10

0

10

1

150

oC

25

oC

-55

oC

Notes :

※

1. V

DS = 40V

2. 250µ s Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

? Notes :

1. 250

Pulse Test

탎

2. T

C = 25?

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

Notes :

※

1. V

GS = 0V

2. 250µ s Pulse Test

25℃

V

SD, Source-Drain voltage [V]

05

10

15

0.5

1.0

1.5

2.0

2.5

3.0

3.5

V

GS = 20V

V

GS = 10V

Note : T

※

J = 25℃

I

D, Drain Current [A]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Note;

※

1. V

GS = 0 V

2. f =1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

5

10

15

20

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

? Note : I

D = 5.5A

Q

G, Total Gate Charge [nC]

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