SI1304BDL-T1-GE3 datasheet(5/9 Pages) VBSEMI

Teilenummer	SI1304BDL-T1-GE3

Bauteilbeschribung	N-Channel 20 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

2

4

6

8

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power Derating

0.0

0.5

1.0

1.5

2.0

2.5

3.0

25

50

75

100

125

150

TF - Foot Temperature (°C)

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SI1304BDL-T1-GE3

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