Datenblatt-Suchmaschine für elektronische Bauteile |
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SI2301BDS-T1-GE3 Datenblatt(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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SI2301BDS-T1-GE3 Datenblatt(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
4 / 9 page TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.5 0.7 0.8 1.0 1.1 - 50 - 25 0 25 50 75 100 125 150 T J -Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.02 0.04 0.06 0.08 2468 10 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 5.1 A 0 2 4 6 8 10 0.01 0.1 1 10 100 1000 Time (s) TA = 25 °C Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T C = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s, 10 s DC www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SI2301BDS-T1-GE3 4 |
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