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SI2318DS-T1-GE3 Datenblatt(PDF) 5 Page - VBsemi Electronics Co.,Ltd

Teilenummer SI2318DS-T1-GE3
Bauteilbeschribung  N-Channel 30-V (D-S) MOSFET
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Hersteller  VBSEMI [VBsemi Electronics Co.,Ltd]
Direct Link  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

SI2318DS-T1-GE3 Datenblatt(HTML) 5 Page - VBsemi Electronics Co.,Ltd

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TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
3
4
5
6
0
255075
100
125
150
Package Limited
TC - Case Temperature (°C)
Power Derating
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
TC - Case Temperature (°C)
www.VBsemi.tw
E-mail:China@VBsemi TEL:86-755-83251052
SI2318DS-T1-GE3
5


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