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FM120-N Datenblatt(PDF) 1 Page - Formosa MS

Teilenummer FM120-N
Bauteilbeschribung  Chip Schottky Barrier Diodes - Silicon epitaxial planer type
Download  2 Pages
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Hersteller  FORMOSA [Formosa MS]
Direct Link  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM120-N Datenblatt(HTML) 1 Page - Formosa MS

  FM120-N Datasheet HTML 1Page - Formosa MS FM120-N Datasheet HTML 2Page - Formosa MS  
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FM120-N THRU FM160-N
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECSOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.04 gram
(V)
(V)
(V)
(V)
(
oC)
FM120-N
12
20
14
20
FM130-N
13
30
21
30
FM140-N
14
40
28
40
FM150-N
15
50
35
50
FM160-N
16
60
42
60
SYMBOLS
MARKING
CODE
Operating
temperature
VRRM
*1
VRMS
*2
VR
*3
VF
*4
0.55
0.70
-55 to +125
-55 to +150
MAXIMUM RATINGS (AT T A=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
30
A
VR = VRRM TA =
25
o C
0.5
mA
VR = VRRM TA = 125
o C
10
mA
Thermal resistance
Junction to ambient
RqJC
90
o C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
120
pF
Storage temperature
TSTG
-55
+150
o C
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.012(0.3) Typ.
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-323
0.106 (2.7)
0.090 (2.3)
0.053 (1.35)
0.045 (1.15)
0.044 (1.1)
0.035 (0.9)


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