Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

MJ10007 Datenblatt(PDF) 5 Page - ON Semiconductor

Teilenummer MJ10007
Bauteilbeschribung  NPN SILICON POWER DARLINGTON TRANSISTORS
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJ10007 Datenblatt(HTML) 5 Page - ON Semiconductor

  MJ10007 Datasheet HTML 1Page - ON Semiconductor MJ10007 Datasheet HTML 2Page - ON Semiconductor MJ10007 Datasheet HTML 3Page - ON Semiconductor MJ10007 Datasheet HTML 4Page - ON Semiconductor MJ10007 Datasheet HTML 5Page - ON Semiconductor MJ10007 Datasheet HTML 6Page - ON Semiconductor MJ10007 Datasheet HTML 7Page - ON Semiconductor MJ10007 Datasheet HTML 8Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 5 / 8 page
background image
MJ10007
5
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
In general, trv + tfi ] tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
1
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
0.1
0.01
0.3
10
0.03
0.1
2
td
tr
0.2
3
0.05
0.07
5
Figure 9. Turn–Off Time
IC, COLLECTOR CURRENT (AMP)
2
0.07
0.05
VBE(off) = 5 V
VCC = 250 V
IB1 = 250 mA
TJ = 25°C
tf
ts
0.3
0.5
VCC = 250 V
IB1 = 250 mA
TJ = 25°C
3
0.1
0.7
0.5
0.2
0.3
0.02
5
7
1
0.7
0.5
0.3
10
0.1
2
0.2
3
5
7
1
0.7
0.5
0.2
0.7
1
RESISTIVE SWITCHING PERFORMANCE
Figure 10. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC = r(t) θJC
R
θJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300


Ähnliche Teilenummer - MJ10007

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Mospec Semiconductor
MJ10007 MOSPEC-MJ10007 Datasheet
190Kb / 4P
   POWER TRANSISTORS(10A,350-400V,150W)
logo
Motorola, Inc
MJ10007 MOTOROLA-MJ10007 Datasheet
228Kb / 8P
   10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS
logo
Wing Shing Computer Com...
MJ10007 WINGS-MJ10007 Datasheet
21Kb / 1P
   NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
logo
Boca Semiconductor Corp...
MJ10007 BOCA-MJ10007 Datasheet
197Kb / 4P
   SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE
logo
New Jersey Semi-Conduct...
MJ10007 NJSEMI-MJ10007 Datasheet
138Kb / 2P
   10 AMPERE POWER DARLINGTON TRANSISTORS
More results

Ähnliche Beschreibung - MJ10007

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
ON Semiconductor
MJ10005 ONSEMI-MJ10005 Datasheet
229Kb / 8P
   NPN SILICON POWER DARLINGTON TRANSISTORS
REV 2
MJ10020 ONSEMI-MJ10020 Datasheet
293Kb / 8P
   NPN SILICON POWER DARLINGTON TRANSISTORS
1995
logo
Quanzhou Jinmei Electro...
2SD2439 JMNIC-2SD2439_15 Datasheet
88Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD1895_2015 JMNIC-2SD1895_2015 Datasheet
98Kb / 3P
   Silicon NPN Darlington Power Transistors
logo
Inchange Semiconductor ...
2SD2386 ISC-2SD2386 Datasheet
83Kb / 3P
   Silicon NPN Darlington Power Transistors
logo
Quanzhou Jinmei Electro...
2SD1895 JMNIC-2SD1895 Datasheet
98Kb / 3P
   Silicon NPN Darlington Power Transistors
logo
Savantic, Inc.
2SC3144 SAVANTIC-2SC3144 Datasheet
99Kb / 3P
   Silicon NPN Darlington Power Transistors
2SC3146 SAVANTIC-2SC3146 Datasheet
96Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD2386 SAVANTIC-2SD2386 Datasheet
126Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD2439 SAVANTIC-2SD2439 Datasheet
142Kb / 3P
   Silicon NPN Darlington Power Transistors
2SD2560 SAVANTIC-2SD2560 Datasheet
147Kb / 3P
   Silicon NPN Darlington Power Transistors
More results


Html Pages

1 2 3 4 5 6 7 8


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com