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Motorola Bipolar Power Transistor Device Data

SWITCHMODE Series

NPN Silicon Power Darlington

Transistors with Base-Emitter

Speedup Diode

The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,

high–speed, power switching in inductive circuits where fall time is critical. They are

particularly suited for line–operated switchmode applications such as:

• Switching Regulators

• Motor Controls

• Inverters

• Solenoid and Relay Drivers

• Fast Turn–Off Times

1.0

µs (max) Inductive Crossover Time — 20 Amps

2.5

µs (max) inductive Storage Time — 20 Amps

• Operating Temperature Range –65 to +200_C

• Performance Specified for

Reversed Biased SOA with Inductive Load

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

MJ10015

MJ10016

Unit

Collector–Emitter Voltage

VCEO

400

500

Vdc

Collector–Emitter Voltage

VCEV

600

700

Vdc

Emitter Base Voltage

VEB

8.0

Vdc

Collector Current — Continuous

— Peak (1)

IC

ICM

50

75

Adc

Base Current — Continous

— Peak (1)

IB

IBM

10

15

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25

_C

PD

250

143

1.43

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.7

_C/W

Maximum Lead Temperature for Soldering Purposes:

1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

v 10%.

SWITCHMODE is a trademark of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10015/D

MJ10015

MJ10016

50 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

400 AND 500 VOLTS

250 WATTS

CASE 197–05

TO–204AE TYPE

(TO–3 TYPE)

≈ 50

≈ 8

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