Datenblatt-Suchmaschine für elektronische Bauteile |
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MJ11030 Datenblatt(PDF) 2 Page - ON Semiconductor |
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MJ11030 Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 4 page MJ11028 MJ11030 MJ11032 MJ11029 MJ11031 MJ11033 2 Motorola Bipolar Power Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) MJ11028, MJ11029 (IC = 1 00 mAdc, IB = 0) MJ11030, MJ11031 MJ11032, MJ11033 V(BR)CEO 60 90 120 — — — Vdc Collector–Emitter Leakage Current (VCE = 60 Vdc, RBE = 1 k ohm) MJ11028, MJ11029 (VCE = 90 Vdc, RBE = 1 k ohm) MJ11030, MJ11031 (VCE = 120 Vdc, RBE = 1 k ohm) MJ11032, MJ11033 (VCE = 60 Vdc, RBE = 1 k ohm, TC = 150_C) MJ11028, MJ11029 (VCE = 90 Vdc, RBE = 1 k ohm, TC = 150_C) MJ11030, MJ11031 (VCE = 120 Vdc, RBE = 1 k ohm, TC = 150_C) MJ11032, MJ11033 ICER — — — — — — 2 2 2 10 10 10 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO — 5 mAdc Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0) ICEO — 2 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 25 Adc, VCE = 5 Vdc) (IC = 50 Adc, VCE = 5 Vdc) hFE 1 k 400 18 k — — Collector–Emitter Saturation Voltage (IC = 25 Adc, IB = 250 mAdc) (IC = 50 Adc, IB = 500 mAdc) VCE(sat) — — 2.5 3.5 Vdc Base–Emitter Saturation Voltage (IC = 25 Adc, IB = 200 mAdc) (IC = 50 Adc, IB = 300 mAdc) VBE(sat) — — 3.0 4.5 Vdc (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. 100 0.2 Figure 2. DC Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.1 0.5 1 2 5 10 20 50 200 20 10 5 50 2 1 0.5 0.2 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C SECOND BREAKDOWN LIMITED MJ11028, 29 MJ11030, 31 MJ11032, 33 100 There are two limitations on the power–handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case tempera- tures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by se- cond breakdown. IC, COLLECTOR CURRENT (AMP) 100 k IC, COLLECTOR CURRENT (AMP) 50 k 20 k 10 k 5 k 2 k 500 Figure 3. DC Current Gain 1 2 5 10 100 20 50 Figure 4. “On” Voltage 100 VCE = 5 V TJ = 25°C 1 k 200 MJ11029, MJ11031, MJ11033 PNP MJ11028, MJ11030, MJ11032 NPN 5 4 3 2 1 1 2 5 10 100 20 50 0 3 TJ = 25°C IC/IB = 100 VBE(sat) 80 µs (PULSED) MJ11029, MJ11031, MJ11033 PNP MJ11028, MJ11030, MJ11032 NPN 80 µs (PULSED) VCE(sat) |
Ähnliche Teilenummer - MJ11030 |
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Ähnliche Beschreibung - MJ11030 |
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