Datenblatt-Suchmaschine für elektronische Bauteile |
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IHP10T120 Datenblatt(PDF) 2 Page - Infineon Technologies AG |
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IHP10T120 Datenblatt(HTML) 2 Page - Infineon Technologies AG |
2 / 14 page IHP10T120 Soft Switching Series Power Semiconductors 2 Rev. 2 Jun-04 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case RthJC 0.9 Diode thermal resistance, junction – case RthJCD 2.6 IGBT thermal resistance, junction – ambient RthJA 62 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.5mA 1200 - - Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=10A Tj=25 °C Tj=125 °C Tj=150 °C - - - 1.7 2.0 2.2 2.2 - - Diode forward voltage VF VGE=0V, IF=4A Tj=25 °C Tj=150 °C - - 1.65 1.7 2.15 - Gate-emitter threshold voltage VGE(th) IC=0.6mA,VCE=VGE 5.0 5.8 6.5 V Zero gate voltage collector current ICES VCE=1200V, VGE=0V Tj=25 °C Tj=150 °C - - - - 0.2 2.0 mA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=10A - 10 - S Integrated gate resistor RGint none Ω |
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