MMBTH10LT1G datasheet(2/6 Pages) ONSEMI

Teilenummer	MMBTH10LT1G

Bauteilbeschribung	VHF/UHF Transistor

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MMBTH10LT1, MMBTH10−4LT1

http://onsemi.com

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

25

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

30

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

3.0

−

Vdc

Collector Cutoff Current

(VCB = 25 Vdc, IE = 0)

ICBO

−

100

nAdc

Emitter Cutoff Current

(VEB = 2.0 Vdc, IC = 0)

IEBO

−

100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 4.0 mAdc, VCE = 10 Vdc)

MMBTH10LT1

MMBTH10−4LT1

hFE

60

120

−

240

−

Collector−Emitter Saturation Voltage

(IC = 4.0 mAdc, IB = 0.4 mAdc)

VCE(sat)

−

0.5

Vdc

Base−Emitter On Voltage

(IC = 4.0 mAdc, VCE = 10 Vdc)

VBE

−

0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz)

MMBTH10LT1

MMBTH10−4LT1

fT

650

800

−

MHz

Collector−Base Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

−

0.7

pF

Common−Base Feedback Capacitance

(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)

Crb

−

0.65

pF

Collector Base Time Constant

(IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)

rb

′Cc

−

9.0

ps

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